发明名称 Layer acoustic wave device and method of making the same
摘要 The present invention provides a layer acoustic wave device that is formed without requiring a bonding process to attach a secondary substrate. In particular, the layer acoustic wave device is formed from a substrate, an interdigital transducer created on the substrate, a dielectric layer formed over the interdigital transducer and substrate, and at least one isolation layer formed over the dielectric layer. The at least one isolation layer has sufficient properties to minimize particle displacement on a top surface of the at least one isolation layer. The at least one isolation layer has a greater acoustic impedance than that of the dielectric layer.
申请公布号 US7619347(B1) 申请公布日期 2009.11.17
申请号 US20060418909 申请日期 2006.05.05
申请人 RF MICRO DEVICES, INC. 发明人 BHATTACHARJEE KUSHAL
分类号 H01L41/083 主分类号 H01L41/083
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