| 发明名称 |
Method of forming a low capacitance semiconductor device and structure therefor |
| 摘要 |
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.
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| 申请公布号 |
US7619287(B2) |
申请公布日期 |
2009.11.17 |
| 申请号 |
US20070671664 |
申请日期 |
2007.02.06 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, INC. |
发明人 |
VENKATRAMAN PRASAD |
| 分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
| 代理机构 |
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