发明名称 Current comparison based voltage bias generator for electronic data storage devices
摘要 An electronic data storage system uses current comparison to generate a voltage bias. In at least one embodiment, a voltage bias generator, that includes a current differential amplifier, generates a current that charges a load to a predetermined voltage bias level. The current comparison results in the comparison between two currents, Iref and Isaref. The current Isaref can be generated using components that match components in the load and memory circuits in the system. In one embodiment, multiple sense amplifiers represent the load. By using matched components, as physical characteristics of the load and memory circuits change, the current Isaref also changes. Thus, the voltage bias changes to match the changing characteristics of the load and memory circuits. The voltage bias generator can include a current booster that decreases the initial charging time of a reactive load.
申请公布号 US7619464(B2) 申请公布日期 2009.11.17
申请号 US20060460732 申请日期 2006.07.28
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 CHOY JON S.;WANG YANZHUO
分类号 G11C11/4074;G05F1/575;G11C16/30 主分类号 G11C11/4074
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