发明名称 |
RESIST COMPOSITION AND PATTERNING PROCESS |
摘要 |
<p>PURPOSE: A resist composition and a patterning process using the same are provided to exhibit excellent water repellency and water slip and forms a pattern with few development defects when processed by immersion lithography. CONSTITUTION: A resist composition comprises a polymer compound(P1) containing a repeating unit represented by formulae 1a and 2a as an essential unit; a polymer compound which has a maleic anhydride-derived skeleton and/or any one or all of a lactone ring and hydroxyl group, and is soluble in an alkaline developing solution by action of acids; a compound generating an acid by exposure of high energy beam; and a organic solvent.</p> |
申请公布号 |
KR20090117995(A) |
申请公布日期 |
2009.11.17 |
申请号 |
KR20090040724 |
申请日期 |
2009.05.11 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HARADA YUJI;HATAKEYAMA JUN;MAEDA KAZUNORI;HASEGAWA KOJI;SHINACHI SATOSHI |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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