发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 <p>PURPOSE: A resist composition and a patterning process using the same are provided to exhibit excellent water repellency and water slip and forms a pattern with few development defects when processed by immersion lithography. CONSTITUTION: A resist composition comprises a polymer compound(P1) containing a repeating unit represented by formulae 1a and 2a as an essential unit; a polymer compound which has a maleic anhydride-derived skeleton and/or any one or all of a lactone ring and hydroxyl group, and is soluble in an alkaline developing solution by action of acids; a compound generating an acid by exposure of high energy beam; and a organic solvent.</p>
申请公布号 KR20090117995(A) 申请公布日期 2009.11.17
申请号 KR20090040724 申请日期 2009.05.11
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HARADA YUJI;HATAKEYAMA JUN;MAEDA KAZUNORI;HASEGAWA KOJI;SHINACHI SATOSHI
分类号 G03F7/004 主分类号 G03F7/004
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