发明名称 |
Thin film transistor array panel including layered line structure and method for manufacturing the same |
摘要 |
The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
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申请公布号 |
US7619254(B2) |
申请公布日期 |
2009.11.17 |
申请号 |
US20050228852 |
申请日期 |
2005.09.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JE-HUN;BAE YANG-HO;CHO BEOM-SEOK;JEONG CHANG-OH |
分类号 |
H01L27/14;H01L29/04;H01L29/15;H01L31/036 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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