发明名称 MOS varactors with large tuning range
摘要 A MOS varactor includes a shallow PN junction beneath the surface of the substrate of a MOS structure. In depletion mode, the depletion region of the MOS structure merges with the depletion region of the shallow PN junction. This increases the total width of the depletion region of the MOS varactor to reduce Cmin.
申请公布号 US7618873(B2) 申请公布日期 2009.11.17
申请号 US20070696736 申请日期 2007.04.05
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. 发明人 SARKAR MANJU;VERMA PURAKH RAJ
分类号 H01L21/20;H01L21/425 主分类号 H01L21/20
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