发明名称 |
Nonvolatile memory device and methods of forming the same |
摘要 |
Example embodiments relate to a semiconductor memory device and methods of forming the same. Other example embodiments relate to a nonvolatile memory device and methods of forming the same. The memory device may include memory cells separately formed on a channel region between impurity regions formed on a substrate. The memory cells may each include a memory layer having a tunnel insulating layer, a nano-sized charge storage layer, and a blocking insulating layer and a side gate formed on the memory layer. According to example embodiments, larger scale integration of the nonvolatile memory devices may be achieved and the reliability of the memory devices may increase.
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申请公布号 |
US7618864(B2) |
申请公布日期 |
2009.11.17 |
申请号 |
US20060589178 |
申请日期 |
2006.10.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;KIM SUNG-HWAN;PARK DONG-GUN;KIM DONG-WON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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