发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A thin film transistor array panel according to an embodiment includes: a substrate; a plurality of gate line formed on the substrate; a plurality of first capacitor electrodes formed on the substrate and separated from the gate lines; a plurality of data line intersecting the gate lines; a plurality of thin film transistor connected to the gate lines and the data lines; a plurality of second capacitor electrodes disposed on the first electrode; a plurality of interconnections connected to the second capacitor electrodes and the thin film transistor and disposed symmetrical to the data lines; and a plurality of pixel electrode, each pixel electrode including a first subpixel electrode connected to one of the thin film transistors and a second subpixel electrode connected to one of the first capacitor electrodes.
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申请公布号 |
US7619694(B2) |
申请公布日期 |
2009.11.17 |
申请号 |
US20050246461 |
申请日期 |
2005.10.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HUN;KIM HYUN-WUK;JUNG MEE-HYE;SHIN KYOUNG-JU;CHANG HAK-SUN;UM YOON-SUNG |
分类号 |
G02F1/1343 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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