发明名称 Thin film transistor array panel and manufacturing method thereof
摘要 A thin film transistor array panel according to an embodiment includes: a substrate; a plurality of gate line formed on the substrate; a plurality of first capacitor electrodes formed on the substrate and separated from the gate lines; a plurality of data line intersecting the gate lines; a plurality of thin film transistor connected to the gate lines and the data lines; a plurality of second capacitor electrodes disposed on the first electrode; a plurality of interconnections connected to the second capacitor electrodes and the thin film transistor and disposed symmetrical to the data lines; and a plurality of pixel electrode, each pixel electrode including a first subpixel electrode connected to one of the thin film transistors and a second subpixel electrode connected to one of the first capacitor electrodes.
申请公布号 US7619694(B2) 申请公布日期 2009.11.17
申请号 US20050246461 申请日期 2005.10.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE CHANG-HUN;KIM HYUN-WUK;JUNG MEE-HYE;SHIN KYOUNG-JU;CHANG HAK-SUN;UM YOON-SUNG
分类号 G02F1/1343 主分类号 G02F1/1343
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