发明名称 Technique for improved ion beam transport
摘要 A technique for improved ion beam transport is disclosed. In one particular exemplary embodiment, the technique may be realized as an ion implantation system comprising an ion source for generating an ion beam, a mass analyzer for selecting a desired ion species from ion particles the ion beam, an ion decelerator configured to reduce an energy of ions in the ion beam, an end station for supporting at least one workpiece to be implanted with ions from the ion beam, and a neutral particle separator configured to remove neutrally-charged particles from the ion beam prior to reaching the ion decelerator.
申请公布号 US7619228(B2) 申请公布日期 2009.11.17
申请号 US20060529508 申请日期 2006.09.29
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BENVENISTE VICTOR
分类号 H01J37/317 主分类号 H01J37/317
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