Composite wafer for bonding and encapsulating an SiC-based functional layer

摘要

A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm2.

主权项

1. A method for manufacturing a composite wafer, the method comprising:
providing a porous carbon substrate core; encapsulating the substrate core using an encapsulating layer, thereby obtaining a substrate; providing a SiC-based functional layer; forming an adhesion layer, comprising a carbide-and-silicide-forming metal on the SiC-based functional layer or on a portion of the encapsulating layer, the adhesion layer having a thickness between 1 nm and 10 nm; positioning the SiC-based functional layer on the substrate in such a manner that the adhesion layer is interposed between the encapsulating layer and the functional layer; and bonding the SiC-based functional layer on the substrate in such a manner that at least a portion of the carbide-and-silicide-forming metal of the adhesion layer reacts with a portion of the SiC of the functional layer to form at least one of a carbide and a silicide, wherein the encapsulating layer encapsulates the substrate core in an essentially oxygen-tight manner.