发明名称 Array substrate and display device
摘要 Disclosed is an array substrate including gate lines (210), data lines (220) formed on a base substrate and a plurality of pixel units defined by intersecting the gate lines (210) and the data lines (220). Each pixel unit includes a TFT. In an overlapping area between an active layer (230) and a source (240) of the TFT, the active layer (230) includes at least two first tabs (231) beyond a gate (260) of the TFT which are located on both sides of a central line of the active layer (230) parallel to the gate line (210) respectively and the two first tabs (231) have a same width in a direction of gate line (210). The above-mentioned array substrate can guarantee that the gate-source capacitance is substantially identical to a predesigned capacitance even if the active layer experiences misalignment while being manufactured, thereby decreasing the error of the common electrode voltage Vcom. Further disclosed is a display device including the above-mentioned array substrate.
申请公布号 US9349755(B2) 申请公布日期 2016.05.24
申请号 US201414443822 申请日期 2014.09.18
申请人 BOE Technology Group Co., Ltd. 发明人 Nagayama Kazuyoshi
分类号 H01L27/14;H01L27/12 主分类号 H01L27/14
代理机构 Collard & Roe, P.C. 代理人 Collard & Roe, P.C.
主权项 1. An array substrate, comprising gate lines, data lines, and a plurality of pixel units defined by intersecting the gate lines and the data lines, the gate lines, the data lines and the pixel units being formed on a substrate, wherein each pixel unit comprises a thin film transistor (TFT), in an overlapping area between an active layer and a source of the TFT, the active layer comprises at least two first tabs protruding beyond a gate of the TFT, the at least two first tabs are disposed on both sides of a central line of the active layer parallel to the gate line respectively and have a same width in a direction of gate line; the at least two first tabs are arranged in symmetry; the farther from a gate driver side of the array substrate is, the width of the first tabs in the direction of gate line has an increasing tendency.
地址 Beijing CN