发明名称 | Array substrate and display device | ||
摘要 | Disclosed is an array substrate including gate lines (210), data lines (220) formed on a base substrate and a plurality of pixel units defined by intersecting the gate lines (210) and the data lines (220). Each pixel unit includes a TFT. In an overlapping area between an active layer (230) and a source (240) of the TFT, the active layer (230) includes at least two first tabs (231) beyond a gate (260) of the TFT which are located on both sides of a central line of the active layer (230) parallel to the gate line (210) respectively and the two first tabs (231) have a same width in a direction of gate line (210). The above-mentioned array substrate can guarantee that the gate-source capacitance is substantially identical to a predesigned capacitance even if the active layer experiences misalignment while being manufactured, thereby decreasing the error of the common electrode voltage Vcom. Further disclosed is a display device including the above-mentioned array substrate. | ||
申请公布号 | US9349755(B2) | 申请公布日期 | 2016.05.24 |
申请号 | US201414443822 | 申请日期 | 2014.09.18 |
申请人 | BOE Technology Group Co., Ltd. | 发明人 | Nagayama Kazuyoshi |
分类号 | H01L27/14;H01L27/12 | 主分类号 | H01L27/14 |
代理机构 | Collard & Roe, P.C. | 代理人 | Collard & Roe, P.C. |
主权项 | 1. An array substrate, comprising gate lines, data lines, and a plurality of pixel units defined by intersecting the gate lines and the data lines, the gate lines, the data lines and the pixel units being formed on a substrate, wherein each pixel unit comprises a thin film transistor (TFT), in an overlapping area between an active layer and a source of the TFT, the active layer comprises at least two first tabs protruding beyond a gate of the TFT, the at least two first tabs are disposed on both sides of a central line of the active layer parallel to the gate line respectively and have a same width in a direction of gate line; the at least two first tabs are arranged in symmetry; the farther from a gate driver side of the array substrate is, the width of the first tabs in the direction of gate line has an increasing tendency. | ||
地址 | Beijing CN |