发明名称 Semiconductor device having capacitors
摘要 A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.
申请公布号 US9349724(B2) 申请公布日期 2016.05.24
申请号 US201213709239 申请日期 2012.12.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Cheon-bae;Oh Yong-chul;Yoon Kuk-han;Lee Kyu-pil;Jun Jong-ryul;Cho Chang-hyun;Jin Gyo-young
分类号 H01L27/08;H01L27/02;H01L27/108;H01L49/02 主分类号 H01L27/08
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A semiconductor device comprising: a substrate; at least one first capacitor including a first storage node formed on the substrate and having a cylindrical shape; at least one second capacitor including a second storage node formed on the substrate, the second storage node having a lower second storage node having a hollow pillar shape including a hollow portion and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node, and an insulating pillar filling a part of the hollow portion, wherein the upper second storage node has a concavely recessed bottom, wherein the lower second storage node is disposed on a first plane disposed apart from the substrate by a first distance, and wherein the upper second storage node is disposed on a second plane disposed apart from the substrate by a second distance that is greater than the first distance.
地址 Suwon-Si, Gyeonggi-Do KR