发明名称 |
Semiconductor device having capacitors |
摘要 |
A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node. |
申请公布号 |
US9349724(B2) |
申请公布日期 |
2016.05.24 |
申请号 |
US201213709239 |
申请日期 |
2012.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Kim Cheon-bae;Oh Yong-chul;Yoon Kuk-han;Lee Kyu-pil;Jun Jong-ryul;Cho Chang-hyun;Jin Gyo-young |
分类号 |
H01L27/08;H01L27/02;H01L27/108;H01L49/02 |
主分类号 |
H01L27/08 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. A semiconductor device comprising:
a substrate; at least one first capacitor including a first storage node formed on the substrate and having a cylindrical shape; at least one second capacitor including a second storage node formed on the substrate, the second storage node having a lower second storage node having a hollow pillar shape including a hollow portion and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node, and an insulating pillar filling a part of the hollow portion, wherein the upper second storage node has a concavely recessed bottom, wherein the lower second storage node is disposed on a first plane disposed apart from the substrate by a first distance, and wherein the upper second storage node is disposed on a second plane disposed apart from the substrate by a second distance that is greater than the first distance. |
地址 |
Suwon-Si, Gyeonggi-Do KR |