SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main surface. In the second main surface of the silicon carbide layer, a trench having a depth in a direction from the second main surface toward the first main surface is provided, and the trench has a sidewall portion where a second layer and a third layer are exposed and a bottom portion, where a first layer is exposed. A position of the bottom portion of the trench in a direction of depth of the trench is located on a side of the second main surface relative to a site located closest to the first main surface in a region where the second layer and the first layer are in contact with each other, or located as deep as the site in the direction of depth.

主权项

1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface, said silicon carbide layer including
a first layer forming said first main surface and having a first conductivity type,a second layer provided in said first layer and having a second conductivity type different from said first conductivity type, anda third layer provided on said second layer as being spaced apart from said first layer, forming a part of said second main surface, and having said first conductivity type, said second main surface of said silicon carbide layer being provided with a trench having a depth in a direction from said second main surface toward said first main surface, said trench having a sidewall portion where said second layer and said third layer are exposed and a bottom portion continuing to said sidewall portion, where said first layer is exposed; a gate insulating film covering each of said sidewall portion and said bottom portion; and a gate electrode provided on said gate insulating film, in said direction of depth of said trench, a position of said bottom portion of said trench being located on a side of said second main surface relative to a site located closest to said first main surface in a region where said second layer and said first layer are in contact with each other, or located as deep as said site in said direction of depth.