发明名称 |
SEMICONDUCTOR DEVICES INCLUDING A DUMMY GATE STRUCTURE ON A FIN |
摘要 |
Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure. |
申请公布号 |
US2016163718(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201615047181 |
申请日期 |
2016.02.18 |
申请人 |
Park Sang-Jine;Kwon Kee-Sang;Kim Do-Hyoung;Yoon Bo-Un;Bai Keun-Hee;Yang Kwang-Yong;Yeo Kyoung-Hwan;Jeon Yong-Ho |
发明人 |
Park Sang-Jine;Kwon Kee-Sang;Kim Do-Hyoung;Yoon Bo-Un;Bai Keun-Hee;Yang Kwang-Yong;Yeo Kyoung-Hwan;Jeon Yong-Ho |
分类号 |
H01L27/11;H01L29/08;H01L29/06;H01L29/161;H01L29/165;H01L29/78;H01L27/092;H01L29/16 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate comprising a first region and a second region; a first fin protruding from the substrate and extending in a first direction on the first region; a recess extending in a second direction different from the first direction in the first fin; a dummy gate structure overlapping the recess and extending in the second direction; second and third fins on the second region, protruding from the substrate, and extending in the first direction; and a trench between the second fin and the third fin such that the second fin and the third fin are spaced apart from each other, wherein a height and a width of the recess are smaller than those of the trench. |
地址 |
Yongin-si KR |