SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device is provided as follows. Active fins protrude from a substrate, extending in a first direction. A first device isolation layer is disposed at a first side of the active fins. A second device isolation layer is disposed at a second side of the active fins. A top surface of the second device isolation layer is higher than a top surface of the first device isolation layer and the second side is opposite to the first side. A normal gate extends across the active fins in a second direction crossing the first direction. A first dummy gate extends across the active fins and the first device isolation layer in the second direction. A second dummy gate extends across the second device isolation layer in the second direction.

主权项

1. A semiconductor device comprising:
a plurality of active fins protruding from a substrate and extending in a first direction; a first device isolation layer disposed at a first side of the active fins; a second device isolation layer disposed at a second side of the active fins, wherein a top surface of the second device isolation layer is higher than a top surface of the first device isolation layer and the second side is opposite to the first side; a normal gate extending across the active fins in a second direction crossing the first direction; a first dummy gate extending across the active fins and the first device isolation layer in the second direction; and a second dummy gate extending across the second device isolation layer in the second direction.