| 摘要 |
It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. An etching process apparatus comprising: a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma; a member held inside of the process chamber; and a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.
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