| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress mixing of an impurity with which an impurity layer formed firstly is doped into an impurity layer formed secondly when the impurity layers of different conductivity types are formed in order. <P>SOLUTION: A method of manufacturing a semiconductor device includes a first residual impurity removing stage of carrying out an etching treatment for etching a surface of an SiC coating in a CVD device at temperature higher than the growing temperature of an n<SP>-</SP>-type channel layer 7 and a heating treatment for heating the inside of the CVD device at temperature higher than the growing temperature of the n<SP>-</SP>-type channel layer 7 after the etching as a stage before a stage of forming an n<SP>-</SP>-type channel layer 7 for a next lot after a p<SP>+</SP>-type second gate layer 8 is formed; and a second residual impurity removing stage of carrying out a deposition stage of depositing an impurity layer of the same conductivity type with the n<SP>-</SP>-type channel layer 7 grown in a subsequent stage at a growing rate higher than the growing rate of the n<SP>-</SP>-type channel layer 7 on a surface of the SiC coating on an internal wall surface of a carbon container. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
