| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a high quality nitride almost free from impurities, in particular, a gallium nitride crystal under an industrially applicable condition of a relatively low pressure. SOLUTION: The apparatus for producing the nitride crystal has structure in which a sealable reaction vessel 6 for growing the nitride crystal is inserted in a sealable pressure-resistant vessel 3. The apparatus has a space fillable with a solvent between the reaction vessel 6 and the pressure-resistant vessel 3, and at least the inner surface of the reaction vessel 6 is made of a material having corrosion resistance. COPYRIGHT: (C)2010,JPO&INPIT |
