发明名称 STATE-MEASURING APPARATUS AND STATE-MEASURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a state-measuring apparatus and a state measuring method for measuring the state of a film formed on a substrate with high accuracy, while restraining the running cost. SOLUTION: A measured object OBJ is irradiated with a light, constituted mainly of a p-polarized light component, at a predetermined incident angleϕ<SB>O</SB>, while minimizing the s-polarized light component, in order to eliminate the influence of an interference phase angle that causes periodic variation to absorbance. The incident angleϕ<SB>0</SB>including incident angles at which amplitude reflectance on the p-polarized light component becomes a minimum value, respectively, in an interface between a thin film 24 and the substrate 22 and in an interface between a vacuum atmosphere and the thin film 24. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009265059(A) 申请公布日期 2009.11.12
申请号 JP20080118322 申请日期 2008.04.30
申请人 OTSUKA DENSHI CO LTD 发明人 TAGUCHI TOICHI;OKAWACHI MAKOTO
分类号 G01B11/06 主分类号 G01B11/06
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