| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser that ensures reduced spectral noise, compact, low cost, and high performance, and to provide a method of manufacturing such a semiconductor laser. Ž<P>SOLUTION: The group III nitride semiconductor laser includes a first conductive type semiconductor substrate 101, a first conductive type semiconductor layer 103 formed on the semiconductor substrate, an active layer 105 formed on the first conductive type semiconductor layer 103, a current narrowing structure 107 that is provided to extend in a stripe pattern toward a given direction on the active layer, and a second conductive type semiconductor layer 109 formed on the current narrowing structure 107. Light-emitting regions on the active layer 105 are formed on many crystalline planes the gradients of which are different with respect to the main side of the semiconductor substrate 101. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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