| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a bump with a high positioning precision. Ž<P>SOLUTION: A method of manufacturing a semiconductor device includes the following steps. (a) A semiconductor substrate 10, in which an integrated circuit 12 is formed, equipped with an electrode 14 electrically connected with the integrated circuit 12, and a mark 16 in which a relative position is fixed to a contour of a front surface of the electrode 14, is prepared. (b) A plating resist 28 having an aperture 30 with the aperture 30 overlapping the front surface of the electrode 14 is formed. (c) Then inspecting on the basis of the mark 16 whether the aperture 30 resides in a previously set region on the front surface of the electrode 14 is carried out. (d) Then a metal layer 34 is formed on the electrode 14 in the aperture 30 by plating. Peeling the plating resist 28 and performing the steps (b) and (c) again, when it is detected in the step (c) that the aperture 30 does not reside in the previously set region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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