| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves a punch-through phenomenon and allows the increase in volume of a body, and to provide a method for manufacturing the same. Ž<P>SOLUTION: The semiconductor element includes: a silicon on insulator (SOI) substrate having a stacked structure of a silicon substrate, a filled oxide layer and a silicon layer, and provided with a fin pattern formed in the direction of the channel width in a gate forming region of the silicon layer, the fin pattern having a width that is wider at a lower end portion than the width of an upper end portion; a gate formed to cover the fin pattern; and a junction region formed within the silicon layer at both sides of the gate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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