发明名称 |
GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.
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申请公布号 |
US2009278158(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20060097054 |
申请日期 |
2006.12.13 |
申请人 |
FUKUNAGA NAOKI;SHINOHARA HIRONAO;OSAWA HIROSHI |
发明人 |
FUKUNAGA NAOKI;SHINOHARA HIRONAO;OSAWA HIROSHI |
分类号 |
H01L33/00;H01L33/02;H01L33/22;H01L33/32;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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地址 |
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