发明名称 SEMICONDUCTOR THROUGH-ELECTRODE FORMING METHOD
摘要 When forming a resin material in a through hole, an electrode pad is formed in the bottom portion of the through hole, an insulating material is formed about the periphery of the through hole and a conductive material is formed in the central portion by an inkjet method, inkjet-ejected resins being ejected in such a manner that concavo-convex indentations and projections are formed in the surface thereof, whereby the adhesiveness between the insulating material and the conductive material and the adhesiveness between the insulating material and the inner walls of the through hole can be improved. Therefore, it is possible to suppress mechanical defects such as detachment of conductive material at the interfaces between the inner surface of the through hole and the resin or conductor layer, or electrical defects such as insulation defects, conduction defects, or the like.
申请公布号 US2009280647(A1) 申请公布日期 2009.11.12
申请号 US20090432185 申请日期 2009.04.29
申请人 PANASONIC CORPORATION 发明人 HIGASHI KAZUSHI
分类号 H01L21/768 主分类号 H01L21/768
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