A TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME,申请号WO2009NL50132-传众专利搜索

发明名称	A TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME
摘要	A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in a 6.8 nm range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd, or Tb, or a Tb-based composition configured to reduce a melting temperature of Tb.
申请公布号	WO2009116867(A3)	申请公布日期	2009.11.12
申请号	WO2009NL50132	申请日期	2009.03.20
申请人	ASML NETHERLANDS B.V.;KRIVTSUN, VLADIMIR MIHAILOVITC;BANINE, VADIM YEVGENYEVICH;BLEEKER, ARNO JAN;IVANOV, VLADIMIR VITALEVITCH;KOSHELEV, KONSTANTIN NIKOLAEVITCH;MOORS, JOHANNES HUBERTUS JOSEPHINA;CHURILOV, SERGEY;GLUSHKOV, DENIS	发明人	KRIVTSUN, VLADIMIR MIHAILOVITC;BANINE, VADIM YEVGENYEVICH;BLEEKER, ARNO JAN;IVANOV, VLADIMIR VITALEVITCH;KOSHELEV, KONSTANTIN NIKOLAEVITCH;MOORS, JOHANNES HUBERTUS JOSEPHINA;CHURILOV, SERGEY;GLUSHKOV, DENIS
分类号	H05G2/00	主分类号	H05G2/00
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