| 摘要 |
<p>PURPOSE: A phase change random access memory and a manufacturing method thereof are provided to reduce contact resistance between an epitaxial layer and an impurity region by forming a diode after forming a silicide film on a surface of a word line region. CONSTITUTION: A phase change random access memory includes a semiconductor substrate(100), an impurity region, a silicide film, a switching element, a bottom electrode contact, a phase change material pattern, and an upper electrode. The impurity region is formed on the semiconductor substrate. A silicide film(145) is formed on the impurity region. The switching element is contacted with the silicide film. The bottom electrode contact is formed in the upper side of the switching element. The phase change material pattern(172) is electrically connected to the upper side of the bottom electrode contact. The upper electrode(174) is electrically connected to the phase change material pattern.</p> |
