| 摘要 |
PROBLEM TO BE SOLVED: To form a conductive area between the surface and the backside of an insulating film without forming a contact hole in the insulating film. SOLUTION: A semiconductor element is formed on a substrate, an insulating film is formed on the semiconductor element, the insulating film has a region having many defects and a region having less defects, a metallic element is diffused into the region having many defects, and a semiconductor device is a conductive area connecting a portion of the surface of the insulating film to a portion of the backside of the insulating film. In a semiconductor device method for manufacturing, a semiconductor element is formed on a substrate, an insulating film is formed on the semiconductor element, a first conductive film electrically connected to the semiconductor element is formed on the insulating film, an area having many defects is formed by adding ions to the insulating film or irradiating the insulating film with a laser beam, a conductive material containing a metallic element is formed on the area having many defects, the metallic element is diffused to the area having many defects, and a conductive area for electrically connecting the first conductive film to the conductive material containing the metallic element is formed in the insulating film. COPYRIGHT: (C)2010,JPO&INPIT
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