发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device without current consumption in a memory device is provided to progress a parallel test and reduce current consumption by using a first parallel test mode. CONSTITUTION: A semiconductor memory device without current consumption in a memory device includes a first parallel test mode signal generating unit, and a second parallel test mode signal generating unit. The first parallel test mode signal generating unit leads data from the bank and operates the bank. The first parallel test mode signal generating unit is enabled in the first parallel test mode. The second parallel test mode signal generating unit leads data from the banks.
申请公布号 KR20090116906(A) 申请公布日期 2009.11.12
申请号 KR20080042711 申请日期 2008.05.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, MUN PHIL
分类号 G11C29/00;G11C7/10 主分类号 G11C29/00
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