| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor in which a threshold voltage can be sufficiently controlled. SOLUTION: The organic thin-film transistor is provided with a gate electrode 4, a gate insulating layer 3, an active layer 2, a source electrode 5 and a drain electrode 6, wherein a layer including an electron accepting compound or electron donating compound 7 is provided between the gate insulating layer 3 and the active layer 2. The method for manufacturing the organic thin-film transistor with the gate electrode 4, the gate insulating layer 3, the active layer 2, the source electrode 5 and the drain electrode 6 has a process of forming the layer including the electron accepting compound or electron donating compound 7 between the gate insulating layer 3 and the active layer 2. COPYRIGHT: (C)2010,JPO&INPIT |
