| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device for driving a large number of memory blocks simultaneously by reducing leak current flowing through memory cell arrays. SOLUTION: The semiconductor storage device is provided with: memory cell arrays MA including a plurality of mutually parallel word lines WL; a plurality of mutually parallel bit lines BL formed so as to cross the word lines WL; and memory cells MC which are arranged at intersections with the word lines WL and the bit lines BL and each of which has a variable register VR and a diode Di connected thereto serially. Voltage 0V is applied to a selected word line WL01 and voltage VSET is applied to a selected bit line BL01. Voltage VSET-Vαis applied to non-selected word lines WL and voltage Vαis applied to non-selected bit lines BL. COPYRIGHT: (C)2010,JPO&INPIT |
