| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic semiconductor storage device capable of supplying a large writing current during data writing by reducing the wiring resistance of a signal line through which the writing current flows. <P>SOLUTION: Over a plurality of memory blocks, bit lines are electrically shortcircuited by a wiring line 1 in a center area. One end of the bit line BL01 of a selected column is coupled with a first power source via a bit line writing driver, and the other end of the bit line of the selected column and the bit lines of remaining unselected columns are all coupled with a second power source via a corresponding bit line writing driver. The wiring resistance of the bit line is greatly reduced by its parallel combined resistance, and a bit line writing current is increased. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
