发明名称 CLEANING METHOD OF PLASMA FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent occurrence of abnormal film formation by reducing occurrence of arcing and preventing various parts in a chamber from being damaged when cleaning is performed by plasma treatment, using gas mixture of hydrofluorocarbon gas and oxygen as cleaning gas, in order to remove deposits deposited in the chamber and the exhaust pipe of a plasma CVD film forming apparatus. SOLUTION: Plasma treatment is carried out using gas mixture containing hydrofluorocarbon gas, oxygen and dissociative gas, where the proportion of dissociative gas is 5-10 vol.% of the total amount of hydrofluorocarbon gas and oxygen, as the cleaning gas. Pentafluoroethane gas is desirable as the hydrofluorocarbon gas, and any one or more sorts of CF<SB>4</SB>, C<SB>2</SB>F<SB>6</SB>, C<SB>3</SB>F<SB>8</SB>, c-C<SB>4</SB>F<SB>8</SB>, NF<SB>3</SB>, and N<SB>2</SB>O are desirable as the dissociative gas. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009266884(A) 申请公布日期 2009.11.12
申请号 JP20080111377 申请日期 2008.04.22
申请人 TAIYO NIPPON SANSO CORP 发明人 ISAKI RYUICHIRO
分类号 H01L21/31;C23C16/44;H01L21/3065 主分类号 H01L21/31
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