| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the reduction in carrier mobility of a semiconductor layer, which is an interface characteristic between the semiconductor layer and an insulating layer, is prevented; and to provide a method of manufacturing the same. SOLUTION: An interface layer 5 comprising a silicon nitride is provided between a semiconductor layer 12 comprising an active polycrystalline silicon and an insulating layer 6 comprising silicon oxide. A nitrogen element in the silicon nitride is dispersed in the semiconductor layer 12 comprising the active polycrysalline silicon film to compensate grid distortion in the active polycrystalline silicon film, whereby a desired interface characteristic between the semiconductor layer 12 and the insulating layer 6 is satisfied. COPYRIGHT: (C)2010,JPO&INPIT
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