发明名称 |
SPUTTERING TARGET MATERIAL FOR MANUFACTURING Ni-W-P,Zr-BASED INTERMEDIATE LAYER FILM IN PERPENDICULAR MAGNETIC RECORDING MEDIUM AND THIN FILM MANUFACTURED BY USING THE TARGET MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide: an alloy for a Ni-W-P,Zr-based intermediate layer film in a perpendicular magnetic recording medium; a sputtering target material for manufacturing a thin film; and a thin film manufactured by using the target material. SOLUTION: The sputtering target material for manufacturing a Ni-W-P,Zr-based intermediate layer film in a perpendicular magnetic recording medium includes, by atomic percentage, W in an amount of 1-20% and P and/or Zr in an amount of 0.1-10% in total with the balance being Ni. The sputtering target material is obtained by solidification molding of a raw material powder manufactured by a gas atomizing method, and the Ni-W-P,Zr-based thin film is manufactured by using the sputtering target material. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009263757(A) |
申请公布日期 |
2009.11.12 |
申请号 |
JP20080118113 |
申请日期 |
2008.04.30 |
申请人 |
SANYO SPECIAL STEEL CO LTD |
发明人 |
SAWADA TOSHIYUKI;KISHIDA ATSUSHI;YANAGIYA AKIHIKO |
分类号 |
C23C14/34;B22F1/00;B22F3/15;B22F9/08;C22C19/03;C23C14/14;G11B5/738;G11B5/851 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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