发明名称 SPUTTERING TARGET MATERIAL FOR MANUFACTURING Ni-W-P,Zr-BASED INTERMEDIATE LAYER FILM IN PERPENDICULAR MAGNETIC RECORDING MEDIUM AND THIN FILM MANUFACTURED BY USING THE TARGET MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide: an alloy for a Ni-W-P,Zr-based intermediate layer film in a perpendicular magnetic recording medium; a sputtering target material for manufacturing a thin film; and a thin film manufactured by using the target material. SOLUTION: The sputtering target material for manufacturing a Ni-W-P,Zr-based intermediate layer film in a perpendicular magnetic recording medium includes, by atomic percentage, W in an amount of 1-20% and P and/or Zr in an amount of 0.1-10% in total with the balance being Ni. The sputtering target material is obtained by solidification molding of a raw material powder manufactured by a gas atomizing method, and the Ni-W-P,Zr-based thin film is manufactured by using the sputtering target material. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009263757(A) 申请公布日期 2009.11.12
申请号 JP20080118113 申请日期 2008.04.30
申请人 SANYO SPECIAL STEEL CO LTD 发明人 SAWADA TOSHIYUKI;KISHIDA ATSUSHI;YANAGIYA AKIHIKO
分类号 C23C14/34;B22F1/00;B22F3/15;B22F9/08;C22C19/03;C23C14/14;G11B5/738;G11B5/851 主分类号 C23C14/34
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