发明名称 |
MOSFETS Having Stacked Metal Gate Electrodes and Method |
摘要 |
MOSFETs having stacked metal gate electrodes and methods of making the same are provided. The MOSFET gate electrode includes a gate metal layer formed atop a high-k gate dielectric layer. The metal gate electrode is formed through a low oxygen content deposition process without charged-ion bombardment to the wafer substrate. Metal gate layer thus formed has low oxygen content and may prevent interfacial oxide layer regrowth. The process of forming the gate metal layer generally avoids plasma damage to the wafer substrate.
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申请公布号 |
US2009280632(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20080118919 |
申请日期 |
2008.05.12 |
申请人 |
LIN CHENG-TUNG;CHIU YUNG-SHENG;WANG HSIANG-YI;YU CHIA-LIN;YU CHEN-HUA |
发明人 |
LIN CHENG-TUNG;CHIU YUNG-SHENG;WANG HSIANG-YI;YU CHIA-LIN;YU CHEN-HUA |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
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