发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.
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申请公布号 |
US2009280583(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20090399140 |
申请日期 |
2009.03.06 |
申请人 |
HIRASAWA SHINICHI;WATANABE SHINYA |
发明人 |
HIRASAWA SHINICHI;WATANABE SHINYA |
分类号 |
H01L21/3205;H01L21/66 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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