发明名称 SEMICONDUCTOR DEVICE, WAFER STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A photo-resist used in photolithography in a microfabrication process may be formed uniformly even if trenches for separating semiconductor devices are formed before the microfabrication process. The two parallel trenches are formed between neighboring element forming regions in a p-type semiconductor layer containing a plurality of arrayed element forming regions and a convex portion formed between the two trenches is cut in separating the semiconductor devices. It becomes unnecessary to form a trench across a whole scribing region by this structure, so that a width of the trench may be reduced to be smaller than a thickness of a dicing blade or a diameter of a laser spot for example. As a result, it becomes possible to uniformly form the photo-resist used in the photolithography in the microfabrication process even if the trenches for separation are formed before the microfabrication process.
申请公布号 US2009278236(A1) 申请公布日期 2009.11.12
申请号 US20090437088 申请日期 2009.05.07
申请人 THE FURUKAWA ELECTRIC CO., LTD 发明人 SATO YOSHIHIRO;NOMURA TAKEHIKO
分类号 H01L23/544;H01L21/78 主分类号 H01L23/544
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