| 摘要 |
The present invention relates to a method for controlling the shape of a growth interface while growing a single crystal ingot by a Czochralski method, comprising the following steps of: beginning a growth of a single crystal ingot after setting a control condition of a single crystal growth process such that an interface of the ingot has a target shape; deriving a measurement value by measuring the weight of the ingot which has grown for a predetermined time with a load cell arranged on an upper part of the single crystal ingot; deriving a theoretical value of the weight of the single crystal ingot through a diameter of the single crystal ingot measured by a diameter measuring camera arranged on the outside of a process chamber for a predetermined time and the height of the single crystal ingot which has grown for a predetermined time; predicting the shape of a growth interface of a growing single crystal ingot by deriving a difference between the measurement value and the theoretical value; and changing a process condition required for growing of the single crystal ingot by comparing an interface shape of a predicted single crystal ingot with an interface shape of a target single crystal ingot. Therefore, the interface shape of a growing ingot can be predicted in real-time during a growing process of a single crystal ingot, thereby controlling a process condition to grow a silicon ingot to have a target interface shape. |
