发明名称 DEVICE AND TECHNIQUE FOR TRANSISTOR WELL BIASING
摘要 A method includes receiving a set of voltages comprising at least a first voltage, a second voltage, and a third voltage and biasing a well of a transistor based on the extreme voltage of the set of voltages. Biasing the well of the transistor can include concurrently providing a first signal and a second signal based on a comparison of the first voltage and the second voltage and selectively coupling the well of the transistor to a source of the extreme voltage of the set of voltages based on the first signal, the second signal, and the third voltage. An electronic device comprises a transistor and a power switching module. The power switching module includes a set of inputs, each input configured to receive a corresponding one of a set of voltages comprising at least a first voltage, a second voltage, and a third voltage, and includes an output coupled to a well of the transistor, the output configured to provide the extreme voltage of the set of voltages.
申请公布号 US2009278571(A1) 申请公布日期 2009.11.12
申请号 US20080115825 申请日期 2008.05.06
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 PIETRI STEFANO;OLMOS ALFREDO;REFAELI JEHODA
分类号 H03K5/00;H03K3/01 主分类号 H03K5/00
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