发明名称 |
MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME |
摘要 |
To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
|
申请公布号 |
US2009280431(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20060066127 |
申请日期 |
2006.09.08 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HIRANO TOMOYUKI;ENDO KOTARO;ISHIDUKA KEITA |
分类号 |
G03F7/20;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|