发明名称 MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME
摘要 To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
申请公布号 US2009280431(A1) 申请公布日期 2009.11.12
申请号 US20060066127 申请日期 2006.09.08
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HIRANO TOMOYUKI;ENDO KOTARO;ISHIDUKA KEITA
分类号 G03F7/20;G03F7/004 主分类号 G03F7/20
代理机构 代理人
主权项
地址