发明名称 |
MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME |
摘要 |
Methods of forming planar carbon nanotube ("CNT") resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided. |
申请公布号 |
WO2009137222(A2) |
申请公布日期 |
2009.11.12 |
申请号 |
WO2009US40222 |
申请日期 |
2009.04.10 |
申请人 |
SANDISK 3D, LLC;SCHRICKER, APRIL, D.;CLARK, MARK, H. |
发明人 |
SCHRICKER, APRIL, D.;CLARK, MARK, H. |
分类号 |
H01L51/00 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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