| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing method capable of forming a resist pattern with a predetermined dimension uniformly in a substrate surface. <P>SOLUTION: The resist pattern is formed on a wafer for inspection (step S1), and a first linewidth of the resist pattern is measured (step S2). A heating temperature of a PEB processing is corrected for every hot plate region based on the measurement of the first linewidth (steps S3 and S4). The resist pattern is formed on the wafer for inspection by carrying out the PEB processing at the corrected heating temperature (step S5), and a second linewidth of the resist pattern is measured (step S6). A linear component is calculated from a distribution of the second line width within the wafer surface (step S7), and light exposure quantity is corrected for every exposure region based on the linear component (steps S8 and S9). Thereafter, the PEB processing is carried out at the corrected heating temperature, a light exposure processing is carried out based on the corrected light exposure quantity, and the predetermined resist pattern is formed on the wafer (step S10). <P>COPYRIGHT: (C)2010,JPO&INPIT |
