| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of wiring by adding an oxidization process for a bimetal, laminating a different kind of seed layer, laminating a barrier layer, and so on while maintaining a high throughput of an apparatus. Ž<P>SOLUTION: The throughput of the apparatus is improved by eliminating variation in thin film process among chambers by minimizing the number of chambers having the shortest tact time among chambers wherein a thin-film alloy seed layer is grown or chambers wherein a thin-film bimetal is grown, or standardizing and using chambers exclusively for one device so that two or three chambers or more are in use for a process having a long tact time. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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