| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which suppresses light emission caused by hot electrons, and reduces the difference in the impact of heat emission between fields. Ž<P>SOLUTION: In the solid-state imaging device, the final-stage source-follower circuit within an output circuit includes a drive transistor and a load transistor connected to the drive transistor, and, by applying, to the load transistor, a control signal having different levels for a first period including a charge sweep-out period and an exposure period of the light-receiving elements in a signal outputting period, and a second period which is a period excluding the charge sweep-out period from the signal outputting period, the source-to-drain voltage of the final-stage drive transistor in the first period is made lower than the source-to-drain voltage in the second period. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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