THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A three-dimensional (3D) semiconductor device is provided, comprising a substrate having a staircase region comprising N steps, wherein N is an integer one or greater; a stack having multi-layers on the substrate, and the multi-layers comprising active layers alternating with insulating layers on the substrate, the stack comprising a plurality of sub-stacks formed on the substrate and the sub-stacks disposed in relation to the N steps to form respective contact regions; and a plurality of connectors formed in the respective contact regions, and the connectors extending downwardly to connect a bottom layer under the multi-layers.

主权项

1. A three-dimensional (3D) semiconductor device, comprising:
a substrate having a staircase region comprising N steps, wherein N is an integer one or greater; a stack having multi-layers on the substrate, and the multi-layers comprising active layers alternating with insulating layers on the substrate, the stack comprising a plurality of sub-stacks formed on the substrate and the sub-stacks disposed in relation to the N steps of the staircase region to form respective contact regions; and a plurality of connectors formed in the respective contact regions, and each of the connectors comprising its own portion in each of the respective contact regions for extending downwardly and electrically connecting a bottom layer, and the bottom layer positioned under the multi-layers, and said each of the connectors also comprising another portion electrically connecting a landing area on the corresponding active layer in each of the sub-stacks.