发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 In a semiconductor device formed by mounting a chip laminate including a semiconductor chip having a small diameter and a semiconductor chip having a large diameter over the top surface of a substrate, an excessive stress is prevented from being added to a joint of the two semiconductor chips. By mounting a first semiconductor chip having a large diameter over a support substrate and thereafter mounting a second semiconductor chip having a small diameter over the first semiconductor chip, it is possible to: suppress the inclination and unsteadiness of the second semiconductor chip mounted over the first semiconductor chip; and hence inhibit an excessive stress from being added to a joint of the first semiconductor chip and the second semiconductor chip.
申请公布号 US2016204082(A1) 申请公布日期 2016.07.14
申请号 US201615075128 申请日期 2016.03.19
申请人 Renesas Electronics Corporation 发明人 Sugiyama Michiaki;Kinoshita Nobuhiro
分类号 H01L25/065 主分类号 H01L25/065
代理机构 代理人
主权项
地址 Tokyo JP