发明名称 |
SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER |
摘要 |
A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer. |
申请公布号 |
US2016204060(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201615077761 |
申请日期 |
2016.03.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHI Chih-Chien;KO Chung-Chi;CHEN Mei-Ling;HUANG Huang-Yi;TUNG Szu-Ping;HSIEH Ching-Hua |
分类号 |
H01L23/528;H01L23/532;H01L21/768 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. A damascene structure, comprising:
a dielectric layer disposed on a substrate and having a damascene opening; a barrier layer disposed on the dielectric layer having the damascene opening, and comprising two portions separated by a defect; a repair layer comprising:
a conductive portion disposed on the two portions of the barrier layer; andan insulating portion disposed in the defect; and a seed layer conformally disposed on the repair layer. |
地址 |
Hsinchu TW |