发明名称 SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER
摘要 A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.
申请公布号 US2016204060(A1) 申请公布日期 2016.07.14
申请号 US201615077761 申请日期 2016.03.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHI Chih-Chien;KO Chung-Chi;CHEN Mei-Ling;HUANG Huang-Yi;TUNG Szu-Ping;HSIEH Ching-Hua
分类号 H01L23/528;H01L23/532;H01L21/768 主分类号 H01L23/528
代理机构 代理人
主权项 1. A damascene structure, comprising: a dielectric layer disposed on a substrate and having a damascene opening; a barrier layer disposed on the dielectric layer having the damascene opening, and comprising two portions separated by a defect; a repair layer comprising: a conductive portion disposed on the two portions of the barrier layer; andan insulating portion disposed in the defect; and a seed layer conformally disposed on the repair layer.
地址 Hsinchu TW