| 摘要 |
<p>PURPOSE: A fabrication method for a phase-change memory device is provided to improve interfacial resistance of a bottom electrode by forming a PN diode with uniform concentration through the plasma ion doping. CONSTITUTION: In a fabrication method for a phase-change memory device, an interlayer insulating film(120) is formed on a semiconductor substrate(100). A contact hole is formed within the interlayer insulating film, and the first conductivity type semiconductor film(130a) having the first conductivity type ion within the contact hole is formed. The PN diode(130) is formed on the first conductivity type semiconductor film by plasma-doping a second conductivity type ion. The first conductivity type is N type, and the second conductive types are a P-type.</p> |
