NONVOLATILE STORAGE ELEMENT, AND METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT OR NONVOLATILE STORAGE DEVICE

摘要

Provided is a method for manufacturing a nonvolatile storage element wherein a shape shift of an upper electrode and a lower electrode is reduced.  The method has a step of depositing a a conductive connection electrode layer (4), a conductive lower electrode layer (3) composed of nonnoble metal oxide, a variable resistance layer (2), an upper electrode layer (1) composed of a noble metal and a mask layer (23), in this order; a step of forming the mask layer (23) in a prescribed shape; a step of forming the upper electrode layer (1), the variable resistance layer (2) and the lower electrode layer (3) in prescribed shapes by etching by using the mask layer (23) as a mask; and a step of removing the mask layer (23) and a region of the connection electrode layer (4) exposed by the etching at the same time.