THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to reduce an off current without largely increasing the entire tact time. CONSTITUTION: A semiconductor pattern includes the first semiconductor layer(47) formed at the first deposition rate and the second semiconductor layer(48) formed at the second deposition rate faster than the first deposition rate. The semiconductor pattern is arranged on a gate electrode. The first and second electrodes are spaced on the semiconductor pattern. A protection insulating layer(70) is formed on the semiconductor pattern to cover the first and second electrodes. The protection insulating layer forms an interfacial surface with a channel area of the first semiconductor layer.